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The invention relates to a method of fabricating a semiconductor device.
In recent years, a copper wiring layer has been formed on a semiconductor substrate. However, when a copper wiring layer is formed, a copper film is subjected to chemical mechanical polishing (CMP) after the formation thereof. Therefore, a device surface is damaged during the copper CMP process. To prevent the surface damage, a tungsten layer is formed as a polishing stopper layer after the formation of the copper wiring layer.
However, when the tungsten layer is etched, reactive gas such as chlorine gas and ozone are generated. An excessive etching speed causes a short circuit between the copper wiring layer and the semiconductor substrate. As a result, a desired performance of the semiconductor device cannot be obtained.
Japanese Patent Laid-Open No. H3-264797, the disclosure of which is hereby incorporated by reference, discloses a method of forming a copper wiring layer. In this method, a barrier film of titanium nitride or titanium is formed before the formation of the copper wiring layer to prevent the contamination by copper.
However, in the above-mentioned method, it is difficult to completely remove the barrier film, so that the copper wiring layer becomes a mixture with the barrier film. As a result, the electric resistance of the wiring layer increases.
Japanese Patent Laid-Open No. H7-182686 discloses a method of etching a silicon oxide film formed on a semiconductor substrate to form a copper wiring layer. In this method, the oxide film is etched by an alkali


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